Micro-electromechanical semiconductor component

ABSTRACT

A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element.

The invention relates to a micro-electromechanical semiconductor component comprising a bending element made of a semiconductor material, and comprising a transistor which sensitive to mechanical stresses and is arranged within the bending element. Particularly, the invention relates to a micro-electromechanical semiconductor component being compatible with regard to usual semiconductor manufacturing processes and having a low power consumption, and particularly a micro-electromechanical CMOS pressure and respectively acceleration sensor with low power consumption.

Micro-electromechanical semiconductor components adapted for use as pressure or acceleration sensors are generally known and have proven themselves in practice. Such micro-electromechanical semiconductor components normally comprise a bending element which is reversibly deformable under the influence of forces acting from the outside and can be realized in the form of a membrane, a bending beam or the like. Said bending element is made of a semiconductor material. In the region of the bending element, an integrated transistor is provided which is sensitive to mechanical stresses. A plurality of such transistors can be connected to form a measurement bridge.

It is an object of the invention to provide an integrated transistor for the reversibly deformable bending element of a micro-electromechanical semiconductor component wherein the transistor is substantially unaffected by parasitic influences.

For achieving the above object, there is proposed, in accordance with the invention, a micro-electromechanical semiconductor component comprising

-   -   a semiconductor substrate,     -   a reversibly deformable bending element made of semiconductor         material, and     -   at least one transistor that is sensitive to mechanical         stresses, said transistor being designed as an integrated         component in the bending element,     -   said transistor being arranged in an implanted active region pan         that is made of a semiconductor material of a first conducting         type and is introduced in the bending element,     -   two mutually spaced, implanted drain and source regions made of         a semiconductor material of a second conducting type are formed         in the active region pan, a channel region extending between         said two regions,     -   implanted feed lines made of a semiconductor material of the         second conducting type lead to the drain and source regions,     -   the upper face of the active region pan is covered by a gate         oxide,     -   a gate electrode made of polysilicon is located on the gate         oxide in the area of the channel region, a feed line likewise         made of polysilicon leading to said gate electrode.

According to the invention, said transistor is formed within an active region pan which, through implantation, has been inserted into the bending element and which comprises a doped semiconductor element of a first conducting type. For instance, the semiconductor material of the bending element is weakly p⁻-doped, while the active region pan is weakly n⁻-doped. The active region pan has two regions implanted into it, namely the drain region and the source region. Within these regions, the pan is strongly p⁺-doped. The entire pan (and optionally the region around the pan) is covered by a gate oxide (e.g. silicon oxide). Thus, no field oxide exists particularly within the top side of the pan and within the region around the pan. Thereby, in its region provided with the transistor, the bending element has a homogenous thickness, which is of advantage for the constant mechanical properties (particularly for the homogenizing of the stress field). Further, in the transistor according to the invention, there are provided no metallic feed lines leading to the drain and source regions as well as to the gate oxide. Instead, the feed lines leading to the drain and source regions are formed as strongly doped, implanted feed lines of the second line type. The transfer gate, like its feed line, is made of polysilicon. By all these measures, it is achieved that, one the one hand, only the slightest possible oxygen layer thicknesses need be applied and that the materials used have substantially the same expansion coefficients as the material of the bending element.

The invention will be explained in greater detail hereunder with reference to the drawing. Specifically, the drawings show the following:

FIG. 1 Process for producing a structure in accordance with the invention:

-   -   a) raw wafer     -   b) oxidation and opening of windows     -   c) etching the cavity     -   d) bonding the top wafer (followed by the CMOS process, which is         not especially shown)     -   e) etching the trenches (after the CMOS process).

FIG. 2 Three-dimensional simplified sectional view of a pressure sensor produced according to the process of FIG. 1.

FIG. 3 Alternative second process for producing a structure in accordance with the invention:

-   -   a) raw wafer     -   b) oxidation and opening of windows     -   c) etching the cavity     -   d) bonding the handle wafer (followed by the CMOS process on the         top wafer with cavity, which is not especially shown)     -   e) etching the trenches (after the CMOS process).

FIG. 4 Three-dimensional simplified sectional view of a pressure sensor produced according to the process of FIG. 3.

FIGS. 5 to 10

-   -   Alternative third process for producing a structure in         accordance with the invention:     -   a) raw wafer     -   b) oxidation     -   c) application of polysilicon layer and partial oxidation     -   d) second raw wafer     -   e) oxidation and opening of a window     -   f) etching the cavity     -   g) bonding the handle wafer     -   h) partial grinding (followed by the CMOS process on the top         wafer with cavity, which is not especially shown)     -   i) etching the trenches (after the CMOS process)     -   j) three-dimensional simplified sectional view of a pressure         sensor produced according to the process of FIGS. 5 to 9.

FIG. 11 Example of the layout of a transistor.

FIG. 12 Connection of four transistors to form a Wheatstone bridge (operation of the transistors as resistors).

FIG. 13 Exemplary connection of four transistors and two further transistors to form a Wheatstone bridge with reference voltage source.

FIG. 14 Exemplary layout of a Wheatstone bridge.

FIG. 15 Connection of eight transistors to form a Wheatstone bridge, with a second short-circuited Wheatstone bridge as a reference voltage source.

FIG. 16 Example of a placement of four Wheatstone bridges according to FIG. 12 on a sensor die with trench structure.

FIG. 17 Example of a placement of four Wheatstone bridges with four Wheatstone bridges as stress-free references according to FIG. 15 on a sensor die with trench structure (For better survey, the voltage references are not illustrated. In principle, for each pair of Wheatstone bridges, there will suffice a third, short-circuited Wheatstone bridge besides the stress-free reference bridge. Thus, 12 Wheatstone bridges would be found on the die).

FIG. 18 Exemplary layout of a differential stage.

FIG. 19 Exemplary circuit arrangement for a circuit with a differential amplifier and a referential differential amplifier as a reference voltage source.

FIG. 20 View onto an exemplary membrane geometry with quadratic trench system

-   -   a) plan view     -   b) view from below.

FIG. 21 View onto an exemplary membrane geometry with quadratic trench system and rhombic central portion

-   -   a) plan view     -   b) view from below.

FIG. 22 View onto an exemplary membrane geometry with quadratic trench system which was chamfered in the corners, and with rhombic central portion

-   -   a) plan view     -   b) view from below.

FIG. 23 View onto an exemplary membrane geometry with quadratic trench system and webs in the corners,

-   -   a) plan view     -   b) view from below.

FIG. 24 View onto an exemplary membrane geometry with round trench system and round cavity,

-   -   a) plan view     -   b) view from below.

FIG. 25 View onto an exemplary membrane geometry with round trench system and non-continuous webs,

-   -   a) plan view     -   b) view from below.

FIGS. 26 and 27

-   -   sensors with additional trenches.

FIG. 28 Boss (central membrane reinforcement) with mass reduction by etched support structure 97.

FIGS. 29 and 30

-   -   Exemplary differential pressure sensors generated from the above         sensors by etching an opening 119.

FIG. 31 View onto an exemplary membrane geometry with round cavity, round outer edge of the trench system, and rhombic central portion

-   -   a) plan view     -   b) view from below.

FIG. 32 View onto an exemplary membrane geometry with round cavity, round outer edge of the trench system, and rhombic central portion, and additional trenches for protection of the system against spreading of externally introduced stress

-   -   a) plan view     -   b) view from below.

FIG. 33 Circuit diagram of a bridge according to FIG. 34 and FIG. 35 as a measurement bridge with reference voltage source.

FIG. 34 Exemplary layout of a measurement bridge with common gate.

FIG. 35 Further exemplary layout of a measurement bridge with common gate.

FIG. 36 Equivalent circuit diagram of a transistor according to FIG. 37 as a measurement bridge with reference voltage source.

FIG. 37 Exemplary layout of a particularly small measurement bridge transistor with four connectors.

FIG. 38 A detailed view.

FIG. 39 A graphical representation of the design and construction of a bending-sensitive transistor within a bending element (e.g. membrane) of a micro-electromechanical semiconductor component.

FIG. 40 A plan view in the direction of arrow A of FIG. 39 onto a partial region of the membrane and respectively the bending element in which the transistor is formed.

The invention will be illustrated by way of example of a pressure sensor for detection of low pressures. A first essential aspect of the invention resides in the generating of the pressure sensor cavity 4 prior to the processing of the CMOS steps. Thereby, random standard CMOS processes can be performed on the surface. This makes it possible, as a second essential step, to place CMOS transistors on a membrane in such a manner that they will lie in a region of optimal mechanical stress upon deflection of the membrane. This point can be determined by analytic considerations and/or finite element simulations.

A first exemplary process is represented, by way of essential steps thereof, in FIGS. 1 and 2. Modifications of this first process will be described further below.

The basic manufacturing process starts with a first wafer 1 which preferably consists of the same material as a later used second wafer 5. On this wafer, a layer 2 is deposited which serves for later connection. In silicon wafers, this layer will be formed as a SiO₂ layer 2 by oxidation. Within this layer, a window will be opened and the later pressure sensor cavity 4 will be etched (FIG. 1 c). Said etching is preferably performed by a DRIE or plasma etching step because particularly the first one will result in straight walls 3.

The upper wafer 5 will likewise be provided with an oxide layer and will be bonded onto the first wafer 1 and be ground (FIG. 1 d). The bonding process herein is preferably performed in a vacuum. This will lead to a cavity which is not filled with gas, and will prevent a later temperature dependence of the interior pressure in the cavity. By this process, a membrane is generated in the region of the cavity, whose thickness is determined by the grinding process.

As a result, one will obtain a wafer package which can be used in a standard CMOS process or standard bipolar process in the same way as a normal SOI material.

After the CMOS processing, which does not have to be described in greater detail here because the processing can be gathered from standard literature, further micromechanical structures 6 can then be etched into the surface 11 (FIG. 1 e).

In the case of the exemplary pressure sensor, these micromechanical structures 6 are e.g. trench structures forming approximately closed rings or quadrangles which are interrupted only by few webs 8 (FIG. 2). In the middle, there is thus generated a central plate 12—referred to as a boss—which, due to the increased thickness, forms a reinforcement. The bottom of the trenches 6 forms a membrane 7 of reduced thickness. This membrane typically takes up substantially less forces. It is important herein that the outer edge of the trench 6 is sufficiently spaced from the wall of the cavity 3 since, otherwise, small adjustment errors in manufacture would have a massive effect on the mechanical stress and thus on the measurement result. This is a substantial innovation. The reproducibility, under the aspect of production technology, of the sensor properties, would otherwise suffer, which would cause increased expenditure for calibration and therefore would entail corresponding costs.

Thus, the pressure on the central plate 12 is dissipated virtually exclusively through mechanical tension via the webs 8. Consequently, it is reasonable to place onto said webs those components 9 which are sensitive to mechanical stress and are provided to detect this stress. These are connected to the connectors 10 via lines. Thus, by the trenches, the mechanical stress field will be adjusted relative to the stress-sensitive electronic components.

By way of alternative, the cavity can also be etched into the upper wafer. This is correspondingly represented in FIGS. 3 and 4 in steps a to f.

An essential disadvantage of the two above processes is the absence of a natural etching stopper for the etching of the trenches 6. For this reason, the thickness of the membrane at the bottom of the trenches 7 can be controlled only with difficulty. As a consequence, the relative error is comparatively high, causing a dispersion of the sensor parameters.

A third exemplary process which is free of the above disadvantage is represented, by way of essential steps thereof, in FIGS. 5 to 10 and steps a to j.

The manufacturing process starts with a first wafer 13 which preferably is of the same material as the later used second wafer 16. Onto this wafer, there is applied a connection layer which in the case of silicon wafers is a SiO₂ layer 14. On this SiO₂ layer, a further layer will be deposited, e.g. a polysilicon layer or amorphous silicon layer 15, and will be superficially oxidized (FIG. 5 c). The depositing of this layer typically can be controlled very well and thus will be considerably more precise in its result than the etching of the trenches in the first two described processes. The second wafer will be oxidized as well, thus likewise generating an oxide layer 17. In this layer, at least one window will be opened and the later cavity 18 will be etched. Said etching is preferably performed by a DRIE etching step because this step will result in straight walls (FIG. 6 f). It is of course also possible to etch the cavity 18 into the upper wafer 13, but this will not be described in greater detail hereunder.

The upper first wafer 13 will be bonded onto the second wafer 16 (FIG. 7) and subsequently will be grinded (FIG. 8). The bonding process herein will preferably again be performed in a vacuum so as to exclude a later temperature dependency of the interior pressure in the cavity 18. By this process, a membrane is generated in the region of the cavity, whose thickness is determined by the grinding process.

As a result, one will again obtain a wafer package which in principle can be used in a standard CMOS process or standard bipolar process in the same way as a standard wafer.

After the CMOS or bipolar processing, further micromechanical structures, e.g. trenches 19, can then be etched into the surface 24 (FIG. 10) as in the above described processes.

In the case of a pressure sensor, these micromechanical structures 19 are again e.g. trench structures forming approximately closed rings or quadrangles which are interrupted only by few webs 20. In the middle, there is thus again generated a central plate 21 which, due to the increased thickness, forms a reinforcement. The bottom of the trenches 19 forms a membrane 25 of reduced thickness. This membrane typically takes up virtually no forces. In contrast to the first method, the additional layer 15 and the resultant additional oxide layer 14 make it possible to stop the etching of the trenches 19 with greater precision than in the first method. Thereby, the electromechanical properties can be realized more precisely and with better repetitive accuracy, thus distinctly lowering the calibration costs.

As in the result of the first process, the pressure (see FIG. 10) on the central plate 21 is dissipated virtually exclusively via the webs 20. Consequently, it is again reasonable to place onto said webs those components 22 which are sensitive to mechanical stress and are provided to detect this stress. These are connected to the connectors 23 via lines.

Of course, it can also be envisioned, instead of using a depositing process, to produce said additional layer 15 by bonding and grinding a third wafer. Further, it can be envisioned to integrate more than one buried insulated layer of the type of said additional layer 15 into a wafer packet.

With a wafer package generated in this manner, it is possible again to produce stress-sensitive sensors on the membrane after their production prior to generating the trenches (6 or 19).

To this end, in a CMOS or bipolar process, stress-sensitive electronic components are produced on the respective surface 11,24 and are connected. For a CMOS process, preferred use is made of a p-doped substrate.

For instance, piezoelectric resistors can be placed on the webs 20,8 and be connected to form a Wheatstone bridge. These, however, have the disadvantage that they first must be brought onto the operating temperature and will consume relatively much electrical energy during measurement. Thus, they are unsuited for energy-autonomous systems. As already described above, the invention also aims at eliminating this problem.

Thus, in place of such simple electronic components, it is reasonable to use actively amplifying components such as e.g. bipolar transistors and MOS transistors. These can again be connected to form a Wheatstone bridge but will need no warm-up time and will consume less energy. An exemplary circuit arrangement is shown in FIG. 12.

Herein, four p-channel transistors 85,86,87,88 form a Wheatstone bridge which can be sensed at the two terminals 89,90. The transistors 87 and 85 herein are designed with the same orientation, and also the transistor pair 88,86 is given the same orientation but is arranged vertically to the transistor pair 87,85. However, this circuit is highly sensitive to manufacturing faults.

Now, to make it possible to produce such a MOS transistor circuit with sufficient accuracy, the transistors have to be designed in such a manner that the electrically active part is self-adjusting. FIG. 11 shows an exemplary layout of such a self-adjusting transistor. Herein, the p+-contact implants 80 and 79 are shaded by the poly gate 81 in such a manner that, also in case of displacement, there will always be maintained the same transistor channel length and transistor width. The poly gate 81 also shades the n+-channel stopper implant. The gate is connected via a low-impedance poly line.

Thus, it is safeguarded that the transistors of identical design geometries have a similar geometry in their physical realization. This geometry is determined substantially by the design of the polysilicon surface.

To bring the transistors to the respective correct operating point, it is suitable to also integrate a reference voltage source on the pressure sensor. In the example (FIG. 13), the exemplary reference voltage source consists of the transistors 30 and 29. The transistors 31,32,33,34 again form a Wheatstone bridge which can be sensed at the terminals 28,36. Both are connected as MOS diodes by connection of the gate to the drain. The reference voltage of transistor 30 is connected to the gate of transistors 31 and 33. The reference voltage of transistor 29 is connected to the gate of transistors 32 and 34. In the example of FIG. 13, the drain of transistor 29 is on the potential of terminal 26. In p-channel transistors, this terminal is typically connected to ground. Therefore, the drain contacts of transistors 32 and 34 are likewise connected to this terminal. The transistors are preferably realized with identical geometric dimensions. An example of the layout of a local Wheatstone MOS bridge is illustrated in FIG. 14. If the transistors are arranged as in FIG. 14, the transistors 31 and 34 are oriented identically. The transistors 23 and 33 are also oriented identically relative to each other but vertically to transistors 31 and 34. FIG. 14 shows an exemplary arrangement.

To keep the mechanical distortion on the membrane at a minimum, the membrane is not provided with a field oxide but only with a full-surfaced, extremely thin gate oxide of a few nm and a suitable passivation. If the application of a field oxide is unavoidable, high symmetry is recommendable so as to keep parasitic effects on all stress-sensitive components at an identical level. In a silicon pressure sensor, for instance, the passivation can consist of silicon nitride. This has a low hydrogen diffusion coefficient and thus will protect the component against in- and out-diffusion of protons which, particularly in case of a permanently applied voltage and a high operating temperature may cause a drift of the p-resistors and the p-channel transistors. This effect is known as NBTI. In order to avoid any possible kind of mechanical distortion, no field oxide or the like will be generated near mechanical components or even on these. Therefore, particularly the membrane of the exemplary pressure sensor is covered only with the gate oxide and the passivation layer, silicon nitride. Further, the feed lines on the die will be realized, if possible, not in metal, which has a high thermal expansion coefficient particularly relative to silicon, but in the wafer material and, in case of silicon, as a high-doped layer or as a high-doped polysilicon or, if not possible otherwise, as a high-doped amorphous or polycrystalline silicon. In this example (FIG. 14), the drain and source feed lines of the transistors 26,28,35,36 are realized e.g. as p+-implants 36,35,26, 28. The gates and their feed lines are realized e.g. in polysilicon 33,39,31 and 32,34,38. In the surface 40 which will be n-doped, no channel will be formed in this example, which is due to the field threshold. This will be possible only at the edge of the poly gates. For this reason, there is implanted a n+-channel stopper 37 which will interrupt parasitic forces. By this exemplary all-silicon realization, it is thus possible that the element sensitive to mechanical stress can be kept very small and insensitive to manufacturing tolerances and thermomechanical stress caused by foreign materials, so that the sensitivity to inhomogeneous stress distribution will be further reduced. In spite of these provisions, there still exist marginal differences between the materials. For this reason, when designing the electronic components on the die, and particularly in components arranged on the membrane, care is taken to maintain the highest possible symmetry. Thus, it is reasonable that components which are used for differentiation—e.g. those in Wheatstone bridges or differential amplifiers—are placed as closely together as possible so as to minimize the influence of manufacturing inhomogeneities.

FIG. 15 shows a further variant of the Wheatstone bridge. Therein, the reference voltage by which the bridge consisting of the transistors 31,32,33, 34 is operated, is generated from a bridge similar to that one, consisting of transistors 30,29,55,56. Suitably, herein, use is made of the same layout module. The reference bridge will be short-circuited, thus generating the reference voltage 35 by which the transistors 31,32,33,34 of the first bridge are controlled. The second bridge will be placed on the substrate as far away as possible from the mechanical tensions but still as close as possible to the first bridge. This serves for keeping the manufacturing variations between the bridges as small as possible. The first bridge will be placed at the point of suitable mechanical stress. This is the point where a mechanical stress as high as possible will be generated upon deflection of the exemplary membrane while, however, this stress is still so homogenous that manufacturing variations will not yet be perceived too massively.

For further minimization of influences of misalignment, it can be reasonable to place a plurality of bridges on one die. This can be effected e.g. by a placement as shown in FIG. 16. Here, there is shown the possible placement of four bridges according to FIG. 12. FIG. 17 shows the placement of bridges and reference bridges according to FIG. 15. In an arrangement as shown in FIG. 17, three levels of compensation exist. On the first level, the level of the four transistors, the direction of the mechanical stress will be detected. This is performed by comparison between values of transistors arranged mutually vertically. On the next level, these four transistors in their totality 43 will be compared to four further, similarly arranged transistors 58 located close to the first four ones, 43, but in a mechanically less stressed region, ideally on the neutral fiber. Thereby, the mechanically induced offset of the bridge will be differentiated from that offset which is caused by adjustment errors during manufacture. If the sensor is symmetric, it is reasonable to install eight further transistors, according to the number of positions on the axis of symmetry. In the example (FIG. 17), these are four pairs of sensors 44,57;41,60;42,59;43,58, each pair consisting of two by four transistors.

Theoretically, the placement of a single transistor is already sufficient for stress measurement. In this case, however, all manufacturing errors will already have a massive effect.

A first alternative layout is shown in FIG. 34. FIG. 33 shows the appertaining circuitry with a reference voltage source consisting of the transistors 108, 109. Here, the four transistors 104,105,106,107 connected to form a Wheatstone bridge have a common gate 110, which simplifies the layout. Via the terminals 103 and 102, the bridge is supplied with voltage. In case of a mechanical distortion of the bridge, an electric voltage will appear at the terminals 111,112. FIG. 35 illustrates a further variant of this bridge. If the channel stopper 37 in the middle of the bridge is omitted, this results in a field-plate-like transistor 115 with four terminals (FIG. 37). FIG. 36 shows the equivalent circuit diagram of transistor 115. Added thereto are then the transistors 114 and 113 which, on the one hand, increase the current consumption, 114, and, on the other hand, reduce the signal level, 113. As a benefit thereof, however, the design size and thus the space requirement can be minimized, which in some applications is very useful.

An alternative layout arrangement of the transistors of a sensor element 41,42,43,44,57,58,59,60 is shown in FIG. 18. Here, the four transistors 44,45,46,47 are arranged in a star-shaped configuration. They have a common drain contact 50 which via a feed line 49 is connected to a current source that is not located on the membrane of the pressure sensor. The gates of the transistors 44,45,46,47 are connected by a poly line 48. The source contacts are respectively connected by a highly doped p+-conduit 51,52,53,54. The four transistors are e.g. components of a differential amplifier as shown in FIG. 19. All other transistors of FIG. 19 are not arranged on the membrane but on the substrate without underlying cavity. It is obvious that already half of the four transistors, i.e. for instance the transistors 45 and 44, would be sufficient to form a differential amplifier. For reasons of symmetry, however, the variant comprising four transistors is recommendable.

The circuit consists of two differential amplifiers. The left-hand amplifier (transistors 65 to 73) is short-circuited in the output and the input and operates as a reference voltage source for the operation of the second amplifier. These transistors are arranged in a region which is free of mechanical stress. The above described transistors 44,45,46,47 form the differential stage with the respective appertaining “working resistors” 61,62,63, 64. The current source 74 supplies current to the thus formed differential amplifier. The transistor 74 in this example is an n-channel transistor. In operation, the outputs of the differential amplifier 77,78 will reflect an asymmetry of the transistors 44,45,46,47 due to mechanical stress. Since the transistors 46 and 44 are oriented differently from the transistors 45 and 47, a uniaxial mechanical stress will result in an output signal at 77,78. The differential amplifier in this example will be brought to the working point by a similarly designed, short-circuited reference differential amplifier. The latter and the transistors 61,62,63,64,74 are suitably arranged not on the membrane but in a region of the die which is nearly free of mechanical stress. In order to guarantee the congruence of the electrical parameters of the components in the stress-free state, these should nonetheless be placed as close to the other transistors as possible. Thus, the orientation and the layout of all elements suitably will be realized as closely adjacent as possible and with the same orientation so that particularly also the current-mirror pairs will be well attuned to each other.

FIGS. 20 to 25 show different embodiments of the trenches and cavities.

In the design of the race track 6 and the cavity 3, various factors have to be considered:

-   -   1. A suitable distance has to be maintained between the         race-track outer wall and the cavity wall.     -   2. The circle passing through the outer contact points of the         webs with the race-track outer wall is not to be intersected by         the race-track outer wall because this would result in a         distortion of the mechanical stress field in the boss 12.     -   3. The connecting lines between the base points of the webs 8 on         boss 12 is not to be intersected by the outer edge of the boss         because this would result in a distortion of the mechanical         stress field in the boss.     -   4. The construction should, if possible, comprise no corners         because very strong voltages could occur in these, causing         nonlinear effects and bistability.

Opposed to the above demands are demands with regard to the burst pressure. If the race-track surface becomes too large, the race-track membrane will break more quickly.

To decouple the membrane from mechanical stress caused by the design a and the connection technology, it is thus reasonable e.g. to generate a further trench 93 around the sensor (FIG. 26) and in this manner to generate a virtually larger race-track membrane without the above mentioned danger of breakage.

Herein, the sensor is suspended on webs 94. In the ideal case, these are no extensions of the webs 8 on which the boss 12 is fastened. Thereby, mechanical stress will be transmitted to the sensors 9 only indirectly from outside.

This principle can still be continued by a further trench 95 and further webs 96 (FIG. 27).

The construction with the aid of a boss will lead to an increased sensitivity to seismic stresses. This sensitivity can be lowered by reducing the boss mass (FIG. 28). For this purpose, a suitable support structure will be etched into the boss 97. There will remain webs which, if suitably selected, will generate a sufficient areal moment of inertia for guaranteeing the mechanical stability. The sensor 22 herein will be placed, as above, on a web 20 interrupting the race-track trench 19.

In case that, instead of an absolute pressure sensor, a differential pressure sensor is to be generated, this can be performed by subsequent etching of an opening 119 into the lower wafer. FIGS. 29 and 30 show corresponding exemplary shapes. The advantage of such a construction resides in the small opening and thus in the only very small loss of stability in comparison to a sensor wherein the cavity was etched from the rear side.

The bonding system normally is made of metal having a considerably deviating thermal expansion coefficient. Further, the metal will cause hysteresis effects. Thus, it is reasonable to decouple the bond pads 10 from the rest of the sensors as far as possible. This can be effected by mechanical guard rings in the form of trenches 157 which e.g. will be laid as far as possible around the pads or to-be-protected parts (FIG. 32).

Hereunder, with reference to FIGS. 39 and 40, there will again be explained special features of the design of a low-stress transistor which is sensitive to mechanical stresses and can be used in a reversibly deformable bending element 8 a made of semiconductor material of a micro-electromechanical semiconductor component. The construction into which the transistor according to FIG. 39 which is sensitive to mechanical stresses is inserted, can have been realized e.g. in the manner described above with reference to FIGS. 1 to 10, 20 to 32, 34, 35, 37 and 38. As already shown in FIGS. 39 and 40, the transistor is arranged, between two trenches 6, within a web 8 of the region of the device wafer 5 covering the cavity 4. Through the handle wafer 1, a venting channel can lead to the cavity, which, however, is without relevance for the design and functionality of the transistor.

The transistor is formed in the active region pan 78 a which has been inserted into the p⁻-doped semiconductor substrate of the device wafer 5 by implantation. Within pan 78 a, strongly p⁺-doped source and drain regions 79,80 are formed, notably likewise by implantation. Between the mutually facing ends of these two regions 79 and 80, the actual channel region of the transistor is arranged. The entire top side of the active region pan 78 a is covered by thin gate oxide (SI oxide) 81 a, wherein, in the area of the channel region, the transistor gate 81 made of polysilicon is arranged on this oxide. As can be seen particularly in FIG. 40, the feed lines leading to the drain and source regions 79,80 are formed by likewise highly doped p⁺-regions generated by implantation, and extend to sites outside the region of the device wafer bridging the cavity 44 (i.e. to sites outside the membrane), where they are connected to metallic lines 79 a,78 a. The feed line 84 to the transistor gate 81 is realized by a line made of polysilicon, as can again be gathered from FIG. 40.

In designing the transistor sensitive to mechanical stresses (stress-sensitive element), it is suitable if this element is not altered by parasitic stress e.g. due to a field oxide. From this, it can be derived that, for using the transistor on and respectively in a bending element 8 a (see FIG. 39) of a micro-electromechanical semiconductor component, it is required that the transistor

-   -   a) does not comprise metal so as to avoid temperature hysteresis         effects due to “creeping”, and     -   b) includes as little oxide as possible since also the latter         has a different thermal expansion coefficient from that of the         semiconductor material of the bending element.

Therefore, it is necessary that a transistor used for stress detection

-   -   a) is situated in a first doped region (active region pan 78 a,         which can be n⁻ or p⁺-doped),     -   b) this region is covered exclusively by the transistor gate         oxide and does not comprise a field oxide,     -   c) is electrically connected, if possible, not with metal but         with a p⁺-doped or n⁺-doped region, and     -   d) the transistor gate is connected via a polysilicon line.

These preconditions are fulfilled in the construction according to the above described FIGS. 39 and 40. For this reason, the transistor described and respectively shown therein is extremely sensitive to mechanical stresses without being additionally influenced by parasitic stress.

Further properties of the invention and of an exemplary application can be described as follows:

-   -   1. A photolithographically produced transistor on a doped         substrate or in a doped trench, wherein         -   i. the transistor is electrically connected only with             materials which have a thermal expansion coefficient similar             to that of the substrate or the trench in which it is             placed,         -   ii. the transistor is in no or only a very slight mechanical             connection to other materials, particularly materials having             mechanical properties different from those of the substrate             or the trench—herein, particularly field oxides,         -   iii. the transistor comprises symmetries,         -   iv. the transistor is produced in different process steps by             lithography of different geometric, mutually attuned             structures, and         -   v. these geometric structures whose superposition and             cooperation in the production process will result in the             transistor, are selected in such a manner that process             variations within the process specification limits which             cause changes of the geometries of the individual             lithography step results in the form of produced geometric             structures, will have no or only a very slight effect on the             mechanical properties of the transistors.     -   2. The transistor according to item 1, which is a MOS         transistor.     -   3. A MOS transistor for detection of mechanical stress,         comprising four channel terminals.     -   4. The MOS transistor according to item 3, which has a four-fold         rotational symmetry and a gate plate with exactly this symmetry         and channel terminals in an arrangement with exactly this         symmetry, without the need of a symmetry of the terminals of         this gate plate.     -   5. The transistor according to item 1, which is a bilpoar         transistor.     -   6. The transistor according to any one of items 1 to 4,         comprising a channel stopper.     -   7. The transistor according to any one of items 1 to 4, of which         the source and/or drain regions are electrically connected by a         highly doped region or a low-impedance polysilicon.     -   8. The transistor according to any one of items 1 to 7, which is         used for detection of mechanical stress.     -   9. The transistor according to any one of items 1 to 8, which is         used in the manner of an electric resistor particularly in a         measurement bridge.     -   10. The transistor according to any one of items 1 to 9, which         is a pnp-transistor.     -   11. The transistor according to any one of items 1 to 9, which         is a npn-transistor.     -   12. The transistor according to any one of items 1 to 9, which         is a p-channel transistor.     -   13. The transistor according to any one of items 1 to 9, which         is an n-channel transistor.     -   14. An electronic circuit comprising transistors according to         one or a plurality of items 1 to 13.     -   15. An electronic circuit being in a functional relationship to         a micro-mechanical device according to item 41.     -   16. The circuit according to item 14 or 15, comprising discrete         and/or integrated electronic components.     -   17. The circuit according to any one of items 14 to 16, which is         at least partially produced by monolithic integration.     -   18. The circuit according to any one of items 14 to 17,         comprising at least two geometrically identically designed         transistors according to any one of items 1 to 13.     -   19. The circuit according to item 18, which generates a signal         suited for measurement of a different state in at least one         physical parameter of the two transistors.     -   20. The circuit according to item 19, wherein said physical         parameter is mechanical stress and/or temperature.     -   21. The circuit according to any one of items 18 to 20, wherein         at least two of the transistors according to any one of items 1         to 13, irrespective of the connecting lines, are arranged         symmetrically to each other.     -   22. The circuit according to any one of items 18 to 20, wherein,         for at least two of the transistors according to one or a         plurality of items 1 to 13, it is provided that their         geometries, irrespective of the connecting lines, can be brought         into mutual congruence through rotation by 90°.     -   23. The circuit according to any one of items 14 to 22,         comprising at least four transistors according to any one of         items 1 to 13.     -   24. The circuit according to item 23, wherein said four         transistors are connected to form a measurement bridge.     -   25. The circuit according to item 24, wherein the gate and         source of at least one transistor according to any one of items         1 to 13 are short-circuited.     -   26. The circuit according to item 24 or 25, wherein the gate of         at least one transistor according to any one of items 1 to 13 is         connected to a reference voltage source.     -   27. The circuit according to item 26, wherein said reference         voltage source is a second, but short-circuited measurement         bridge according to any one of items 24 to 27.     -   28. The circuit according to item 27, wherein said second         measurement bridge is similar to the first measurement bridge,         particularly regarding the dimensioning of the transistors         and/or the circuitry and/or the produced geometries, and/or in         the extreme case is a geometric copy of the first measurement         bridge.     -   29. The circuit according to any one of items 14 to 28, wherein         respectively two of said four transistors are identically         oriented while having the same geometry.     -   30. The circuit according to item 29, wherein the transistors of         one transistor pair are oriented vertically to the transistors         of the other transistor pair.     -   31. The circuit according to item 30, wherein said four         transistors are arranged symmetrically in a quadrangle.     -   32. The circuit according to item 30, wherein said four         transistors are arranged symmetrically in a cross configuration.     -   33. The circuit according to any one of items 14 to 23 or 29 to         32, comprising at least one differential amplifier circuit.     -   34. The circuit according to item 33, wherein at least one of         the transistors of at least one differential amplifier is a         transistor according to any one of items 1 to 13.     -   35. The circuit according to item 33 or 34, comprising at least         one reference voltage source which is coupled to at least one         first differential amplifier.     -   36. The circuit according to item 35, wherein said reference         voltage source is a second, but short-circuited differential         amplifier which is a differential amplifier according to any one         of items 33 to 35.     -   37. The circuit according to item 36, wherein said second         differential amplifier is similar to the first differential         amplifier, particularly regarding the dimensioning of the         transistors and/or the connection of the transistors and/or the         produced geometries of the transistors, and/or in the extreme         case is a geometric copy of the first differential amplifier.     -   38. The circuit according to any one of items 14 to 37, wherein         at least a part of the circuit is also a part of the         micromechanical device.     -   39. The circuit according to item 38, wherein at least a part of         the circuit is functionally connected to at least one         micromechanical functional element in such a manner that at         least one mechanical parameter of at least one micromechanical         functional element is coupled to the state function of the         circuit or to at least one electrical parameter of the state         function of at least one circuit portion.     -   40. The circuit according to item 39, wherein said functional         element is particularly a bar or web, a membrane, a resonator, a         lip clamped on one side, both sides or three sides, a shield or         a needle.     -   41. A micromechanical device which has been produced by         lithographic processes and by connecting, particularly bonding,         at least two wafers, wherein         -   I. prior to the connecting of said at least two wafers, at             least one micromechanical functional element in the form of             at least one surface structure has been applied on at least             one surface of at least one of said two wafers, and         -   II. after the connecting of the wafers, at least one of the             thus produced micromechanical functional elements and             respectively surface structures is situated near the             boundary surface between the wafers within the resultant             wafer package, and         -   III. subsequent to the connecting of the wafers, there has             been performed, on at least one surface of the resultant             wafer package, at least one process for producing of at             least one electronic component, and         -   IV. at least one of the thus produced electronic components             is sensitive to at least one non-electric physical value and             is provided to detect the same, and         -   V. said component is produced to be self-adjusting.     -   42. The micromechanical device according to item 41, wherein at         least one of said self-adjusting components is a transistor         according to any one of items 1 to 10 or is a part of the         circuit according to any one of items 14 to 40.     -   43. The micromechanical device according to items 41 or 42,         which is produced from silicon.     -   44. The micromechanical device according to any one of items 41         to 43, wherein said at least one micromechanical functional         element is at least one cavity.     -   45. The micromechanical device according to item 44, wherein at         least one cavity together with at least one surface of the wafer         package defines a membrane.     -   46. The micromechanical device according to items 44 and 45,         wherein at least one cavity comprises no oxides on its walls.     -   47. The micromechanical device according to any one of items 41         to 46, wherein at least one micromechanical functional element         is situated on the surface of the device.     -   48. The micromechanical device according to item 47, wherein         said at least one micromechanical functional element is a web, a         trench, a membrane, a perforation and a buried cavity or a blind         hole.     -   49. The micromechanical device according to item 38, wherein at         least one micromechanical functional element has been produced         on the surface after performing a process, particularly a CMOS         process, for producing a transistor according to any one of         items 1 to 13 or a circuit according to any one of items 14 to         40.     -   50. The micromechanical device according to any one of items 41         to 49, wherein at least one micromechanical functional element         has been produced inter alia by use of DRIE or plasma etching         processes.     -   51. The micromechanical device according to any one of items 41         to 50, which can be used as a pressure sensor.     -   52. The micromechanical device according to any one of items 44         to 51, wherein the geometric shape of at least one cavity         comprises symmetries with respect to the connection plane of the         wafers.     -   53. The micromechanical device according to any one of items 41         to 52, wherein, on at least one surface of the wafer package,         the trenches have been generated by DRIE or plasma etching.     -   54. The micromechanical device according to item 53, wherein at         least one partial quantity of the trenches form a closed         structure, e.g. a ring, an ellipse, a quadrangle, a star or the         like which only at few sites are interrupted by thin webs 8,20.     -   55. The micromechanical device according to items 53 and 54,         wherein at least a part of the trenches are arranged         symmetrically relative to each other.     -   56. The micromechanical device according to items 52 and 55,         wherein the axes of symmetry of a part of the trenches and of at         least one cavity coincide and respectively coincide in case of         an ideal arrangement.     -   57. The micromechanical device according to items 52, 55 and 56,         wherein at least a part of the trenches are in a mechanical         functional relationship with at least one cavity.     -   58. The micromechanical device according to item 57, wherein the         bottom of at least one of the trenches together with at least         one of the cavities forms a thinner portion of the membrane or         an opening leading into this cavity.     -   59. The micromechanical device according to any one of items 41         to 58, wherein micromechanical functional elements of the top         side, particularly the trenches mentioned under any one of items         47 to 58, are not situated, with their edges defining their         shape, above shape-defining edges of micromechanical structures         of the bottom side and micromechanical structures of the top         side.     -   60. The micromechanical device according to item 59, wherein the         lever length 116 between the starting point of a structure 121         therebelow, particularly of a buried cavity 4, and the starting         point of a structure 119 thereabove, particularly of a trench 6,         is larger than the smaller one of the vertical lever dimensions         118 and 120 (see FIG. 38).     -   61. The micromechanical device according to any one of items 44         to 60, wherein, within the body of the micromechanical device,         particularly during production of the device within the wafer         package, at least one cavity is arranged which is connected with         the bottom side or top side of the wafer package by at least one         micromechanical functional element, particularly a tube.     -   62. The micromechanical device according to item 61, which can         be used as a pressure differential sensor against a defined         referential pressure or ambient pressure.     -   63. The micromechanical device according to item 61 and 62,         comprising at least one microfluidic functional element.     -   64. The micromechanical device according to item 63, wherein at         least one microfluidic functional element serves or can serve         for supply of media such as e.g. liquids and gases.     -   65. A micromechanical device, wherein at least one microfluidic         functional element according to any one of items 63 to 64 or a         micromechanical functional element according to item 61 has been         produced after performing a process, particularly a CMOS         process, for producing a transistor according to any one of         items 1 to 13 or a circuit according to any one of items 14 to         40.     -   66. The micromechanical device according to any one of items 1         to 65, wherein, at least as a partial substrate or substrate, a         p-doped semiconductor material has been used.     -   67. The micromechanical device according to any one of items 1         to 65, wherein, at least as a partial substrate or substrate, an         n-doped semiconductor material has been used.     -   68. The micromechanical device according to any one of items 44         to 67, wherein, in at least one substrate, a modification of         material, e.g. an SiO₂ layer, is provided which serves as an         etching stopper for the etching of at least one cavity.     -   69. The micromechanical device according to any one of items 53         to 68, wherein, in at least one substrate, a modification of         material 14 is provided which serves as an etching stopper for         the etching of at least a part of the trenches.     -   70. The micromechanical device according to item 69, wherein, in         at least one substrate, at least one modification of material 15         is provided which acts as a membrane in the region of the         trenches.     -   71. The micromechanical device according to item 70, wherein at         least one modification of material 15 is made of polysilicon         and/or amorphous silicon and has been deposited on one of the         wafers of the wafer package prior to the wafer bonding.     -   72. The micromechanical device according to any one of items 44         to 67 and 69 to 71, wherein at least one cavity has been etched         into at least one substrate in a time-controlled manner.     -   73. The micromechanical device according to any one of items 53         to 68 and 70, wherein at least a part of the trenches have been         etched into the substrate in a time-controlled manner.     -   74. The micromechanical device according to any one of items 53         to 73, wherein, prior to the etching of the trenches, a         semiconductor process has been performed for producing         electrical functional elements on at least one surface of the         wafer package.     -   75. The micromechanical device according to item 74, comprising         at least one electrical functional element which has been         produced in the process according to item 74.     -   76. The micromechanical device according to item 75, wherein at         least one electrical functional element has the function of an         electrical line or a contact or a through-hole or an electric         line insulator or a resistor or a transistor or a diode or a         capacitor or a coil.     -   77. The micromechanical device according to item 76, wherein at         least one of the functional elements is operative to change at         least one parameter—particularly an electrical parameter—in         dependence on mechanical values, particularly tensile stress,         compressive stress and shear stress.     -   78. The micromechanical device according to item 77, wherein         said change of parameter can be measured externally of the         sensor.     -   79. The micromechanical device according to item 77 and 54,         wherein at least one of the functional elements is in a         mechanical functional relationship with at least one web 8,20.     -   80. The micromechanical device according to item 77 and 36,         wherein at least one electronic functional element, relative to         -   a) at least one first micromechanical functional element,             particularly a membrane (12 or 21),         -   b) at least two further, second micromechanical functional             elements, particularly trenches (6 or 19), and         -   c) at least one third micromechanical functional element,             particularly a web (8 or 20),     -   said functional elements according to a) to c) being in a         mechanical functional relationship,     -   is positioned on the third micromechanical functional element,         particularly web, in such a manner that said at least one         electronic functional element is situated on or near the point         of highest mechanical stress when the first micromechanical         functional element, particularly a membrane or an inertial mass         (12 or 21) is deformed, particularly deflected.     -   81. The micromechanical device according to item 80, wherein at         least one third micromechanical functional element, particularly         a web, is shaped in such a manner that said element has a range         of high homogenized mechanical stress in case of deformation of         the first micromechanical functional element, particularly a         membrane or an inertial mass.     -   82. The micromechanical device according to item 81, wherein at         least one electronic functional element is arranged on at least         one such site of high homogenized mechanical stress.     -   83. The micromechanical device according to any one of items 41         to 82, wherein at least two wafers have been formed with         different thicknesses.     -   84. The micromechanical device according to any one of items 41         to 82, wherein a wafer material is a silicon or SOI material.     -   85. The micromechanical device according to any one of items 44         to 79, wherein the cavity is produced in the lowermost wafer         prior to the bonding of three wafers.     -   86. The micromechanical device according to item 86, wherein         said three wafers have been produced with different thicknesses.     -   87. The micromechanical device according to any one of items 53         to 86, wherein at least one of said second micromechanical         functional elements is a trench (6 or 19) having a non-constant         width.     -   88. The micromechanical device according to any one of items 54         to 87, wherein at least one web does not divide a trench (6 or         19) but only extends into it (see e.g. FIG. 25).     -   89. The micromechanical device according to any one of items 54         to 88, wherein, between the webs and trenches, a surface is         formed on a membrane which, being suspended on the webs, is         quadratic (see e.g. FIG. 20 or 23), rhombic (see e.g. FIG. 21 or         FIG. 22) or round (e.g. FIG. 24).     -   90. The micromechanical device according to item 89, wherein at         least one trench has no bottom and thus is connected to at least         one cavity.     -   91. The micromechanical device according to any one of items 41         to 90, which can be used as a pressure sensor and/or         acceleration sensor.     -   92. The micromechanical device according to any one of items 41         to 91, comprising symmetrically arranged mechanical first         functional elements, particularly webs, which are connected to         at least one further, second micromechanical functional element,         particularly a membrane or inertial mass, and on which         respectively mutually similar circuit portions of a circuit         according to any one of items 14 to 40 are arranged.     -   93. The micromechanical device and circuit according to item 92,         wherein the circuit portions arranged on the first         micromechanical functional elements are electrically connected         to each other in such a manner that average values and/or         differences will be formed.     -   94. The micromechanical device according to any one of items 41         to 93, which at least at a first position comprises a first         mechanical functional element, particularly a web that is         mechanically connected to at least one further, second         micromechanical functional element, particularly a membrane, and         has a second position being without a mechanical function and         being subjected to no or only slight mechanical influence, and         wherein, at least at said two positions, respectively mutually         similar circuit portions of a circuit according to any one of         items 14 to 40 are arranged.     -   95. The micromechanical device and circuit according to item 94,         wherein the circuit portions arranged at said two positions are         electrically connected to each other in such a manner that         average values and/or differences will be formed.     -   96. The micromechanical device and circuit according to any one         of items 92 to 95, wherein the micromechanical device consists         of at least two complete micromechanical partial devices,         particularly two pressure sensors according to any one of items         92 to 95 which again are in a functional relationship.     -   97. The micromechanical device and circuit according to item 96,         wherein, within the circuit, mathematical operations,         particularly the formation of average values and differences,         are performed on electrical output values of said partial         devices.     -   98. The micromechanical device and circuit according to any one         of items 94 to 97, wherein at least one second circuit portion         being similar to a first circuit portion at said first position,         particularly on a web, is used as a reference, particularly         voltage reference, and is not in a functional relationship with         a micromechanical functional element.     -   99. The micromechanical device and circuit according to any one         of items 92 to 98, wherein, to each circuit portion at a first         position, at least one circuit portion similar to the circuit         portion on the respective web, is assigned as a reference, and         wherein said reference is not in a functional relationship with         a micromechanical functional element.     -   100. The micromechanical device and circuit according to item         99, wherein said reference is situated on the neutral fiber.     -   101. The micromechanical device and circuit particularly         according to any one of items 92 to 100, wherein a part thereof         is formed by at least one amplifier circuit.     -   102. The micromechanical device and circuit particularly         according item 101, wherein said amplifier circuit has a         positive and a negative input.     -   103. The micromechanical device and circuit according to any one         of items 1 to 101, which in wide regions is provided with a         protection against humidity and/or in- and out-diffusion of         protons.     -   104. The micromechanical device and circuit according to item         103, wherein said diffusion protection consists of a         silicon-nitride layer.

Further advantages of the invention are:

-   -   1. Reduction of the number of required wafer bond connections     -   2. Reduction of parasitic elements         -   a) Elimination of sources of mechanical stress         -   b) Protection against dissipation of unavoidable mechanical             stress         -   c) Maximization, homogenization and linearization of             mechanical useful stress fields         -   d) Reduction of the dissipation of electronic components         -   e) Reduction of the dissipation of electronic circuits         -   f) Reduction of the dissipation of micromechanical             functional elements     -   3. Increasing the tolerance of the construction towards         mechanical and electrical manufacturing variations     -   4. Reduction of the effects of unavoidable parasitic elements     -   5. Reduction of the influence of the design and connection         technology     -   6. Flexibilization of the use of sensors on the side of the user     -   7. Reduction of the required die area     -   8. Possibility of coupling to high-volume standard CMOS lines,         particularly such lines with p-doped substrates

These properties are realized particularly by the measures described hereunder, which can be applied individually or in total or partial combination:

-   -   1. Reduction of the number of required wafer bond connections by         -   a) Producing cavities prior to the CMOS processing     -   2. Reduction of parasitic elements by         -   a) Elimination of sources of mechanical stress, particularly             by             -   i) Avoidance of unnecessary layers on the                 micromechanical functional elements, particularly on                 pressure sensor membranes         -   b) Protection against dissipation of unavoidable mechanical             stress, particularly by             -   i) Containment of the stress by mechanical guard rings,                 and             -   ii) Reduction of the depth of cavities in the material,                 wherein the latter has a higher areal moment of inertia         -   c) Maximization, homogenization and linearization of useful             stress fields, particularly by             -   i) Etching trenches into pressure membranes             -   ii) Selection of the trench shape             -   iii) Distance between rear-side structures and buried                 structures on the one hand and front-side structures on                 the other hand for reduction of adjustment errors         -   d) Reduction of the dissipation of electronic components by             -   i) Use of self-adjusting structures         -   e) Reduction of the dissipation of electronic circuits by             -   i) Use of a compact, symmetrical, self-adjusting special                 transistor             -   ii) Use of a compact, symmetrical, self-adjusting                 differential amplifier stage             -   iii) Use of a compact, self-adjusting, symmetrical                 active Wheatstone bridge         -   f) Reduction of the dissipation of micromechanical             functional elements by             -   i) Use of defined, CMOS-compatible etching stops             -   ii) Use of particularly miniaturized special transistors     -   3. Increasing the tolerance of the construction towards         mechanical and electrical manufacturing variations         -   a) Differentiation of the stress direction         -   b) Differentiation between stressed and unstressed circuit             portions         -   c) Differentiation between circuit portions at different             symmetry positions         -   d) Suitable compensatory connection of circuit portions             which can detect the differences i to iii by measuring         -   e) Use of particularly miniaturized special transistors         -   f) Miniaturization of the mechanical design by well-aimed             reduction of the layer stack in the region of             micromechanical functional elements     -   4. Reduction of the effects of unavoidable parasitic elements         -   a) Compensatory circuits         -   b) Use of particularly miniaturized special transistors     -   5. Reduction of the influence of the design and connection         technology by         -   a) Reduction of the depth of cavities in the material,             whereby the material has a higher areal moment of inertia         -   b) Use of round cavities, whereby the vertical areal moment             of inertia is enlarged     -   6. Flexibilization of the use of sensors on the side of the user         by         -   a) Adjustability of the amplification by the user     -   7. Reduction of the required die area         -   a) Reduction of the depth of cavities in the material,             whereby the material has a higher areal moment of inertia             and the sensor can be reduced in size without loss of             stability         -   b) Use of particularly miniaturized special transistors         -   c) Forming a minimal access opening for gases and liquids             leading to a buried cavity     -   8. Possibility of coupling to high-volume standard CMOS lines,         particularly such lines with p-doped substrates         -   a) Forming the cavities with defined etching stopper prior             to the CMOS process         -   b) Production of micromechanical functional elements on the             surface, such as trenches, after the CMOS processing, by             means of plasma or DRIE etching         -   c) Forming minimal access openings leading to buried             cavities, after the CMOS processing.

LIST OF REFERENCE NUMERALS

-   1. First wafer -   2. Oxide layer -   3. Straight wall of cavity 4 -   4 Cavity 4 -   5 Second wafer -   6 Trenches in the wafer package -   7 Thin membrane regions defined by trenches 6 and cavity 4 -   8 Webs interrupting the trenches 6 -   8 a Bending element -   9 Components for detecting the mechanical stress -   10 Terminals with terminal lines -   11 Surface of the wafer package -   12 Central plate of the membrane -   13 First wafer -   14 SiO₂ layer -   15 Polysilicon layer -   16 Second layer -   17 Second oxide layer -   18 Cavity -   19 Trenches -   20 Webs interrupting the trenches -   21 Central plate of the membrane -   22 Components for detecting the mechanical stress -   23 Terminals with terminal lines -   24 Surface of the wafer package -   25 Membrane of small thickness -   26 Negative terminal of the Wheatstone bridge -   27 Positive terminal of the Wheatstone bridge -   28 First clamp for capturing the voltage on the Wheatstone bridge -   29 Lower p-channel MOS diode of the reference voltage source for the     Wheatstone bridge -   30 Upper p-channel MOS diode of the reference voltage source for the     Wheatstone bridge -   31 First p-channel MOS transistor of the Wheatstone bridge -   32 Second p-channel MOS transistor of the Wheatstone bridge -   33 Third p-channel MOS transistor of the Wheatstone bridge -   34 Fourth p-channel MOS transistor of the Wheatstone bridge -   35 Reference voltage line -   36 Second clamp for capturing the voltage on the Wheatstone bridge -   37 n+-channel stopper implant -   38 Gate-connector transistor 32 and 34 in low-impedance polysilicon -   39 Gate-connector transistor 33 and 31 in low-impedance polysilicon -   40 n−-doped surface (non-conducting) -   41 Upper structure sensitive to mechanical stress, e.g. a Wheatstone     bridge according to FIG. 12 -   42 Right-hand structure sensitive to mechanical stress, e.g. a     Wheatstone bridge according to FIG. 12 -   43 Lower structure sensitive to mechanical stress, e.g. a Wheatstone     bridge according to FIG. 12 -   44 First differential amplifier p-channel transistor -   45 Second differential amplifier p-channel transistor -   46 Third differential amplifier p-channel transistor -   47 Fourth differential amplifier p-channel transistor -   48 Reference voltage for transistors 44,45,46,47 -   49 Current-source feed line for transistors 44,45,46,47 -   50 Common drain contact of the p-channel transistors 44,45,46,47 -   51 Connector transistor 46, negative output knot of the differential     amplifier -   52 Connector transistor 45, positive output knot of the differential     amplifier -   53 Connector transistor 44, negative output knot of the differential     amplifier -   54 Connector transistor 47, positive output knot of the differential     amplifier -   55 Third p-channel transistor for reference bridge circuit -   45 Fourth p-channel transistor for reference bridge circuit -   57 Upper structure sensitive to mechanical stress, e.g. a Wheatstone     bridge according to FIG. 12 as a reference structure for 41 in the     region free of mechanical stress -   58 Right-hand structure sensitive to mechanical stress, e.g. a     Wheatstone bridge according to FIG. 12 as a reference structure for     42 in the region free of mechanical stress -   59 Lower structure sensitive to mechanical stress, e.g. a Wheatstone     bridge according to FIG. 12 as a reference structure for 43 in the     region free of mechanical stress -   60 Left-hand structure sensitive to mechanical stress, e.g. a     Wheatstone bridge according to FIG. 12 as a reference structure for     44 in the region free of mechanical stress -   61 Differential amplifier: current mirror transistor corresponding     to transistor 69 -   62 Differential amplifier: current mirror transistor corresponding     to transistor 70 -   63 Differential amplifier: current mirror transistor corresponding     to transistor 71 -   64 Differential amplifier: current mirror transistor corresponding     to transistor 72 -   65 Reference amplifier: first differential amplifier p-channel     transistor -   66 Reference amplifier: second differential amplifier p-channel     transistor -   67 Reference amplifier: third differential amplifier p-channel     transistor -   68 Reference amplifier: fourth differential amplifier p-channel     transistor -   69 Reference amplifier: current mirror transistor corresponding to     transistor 61 -   70 Reference amplifier: current mirror transistor corresponding to     transistor 62 -   71 Reference amplifier: current mirror transistor corresponding to     transistor 63 -   72 Reference amplifier: current mirror transistor corresponding to     transistor 64 -   73 Reference amplifier: n-channel current source transistor (current     mirror) -   74 Reference amplifier: n-channel current source transistor (current     mirror) -   75 Negative terminal -   76 Positive terminal -   77 Negative output signal -   78 Positive output signal -   78 a Active region pan -   79 p+-contact implant (source region) -   79 a Metal line -   80 p+-contact implant (drain region) -   80 a Metal line -   81 Poly gate of a self-adjusting p-channel transistor -   81 a Gate oxide -   82 n+-implant region (channel stop) -   83 n+-implant region (channel stop) -   84 Feed line of highly doped polysilicon -   85 First p-channel MOS transistor of the Wheatstone bridge -   86 Second p-channel MOS transistor of the Wheatstone bridge -   87 Third p-channel MOS transistor of the Wheatstone bridge -   88 Fourth p-channel MOS transistor of the Wheatstone bridge -   89 Left-hand tap -   90 Right-hand tap -   91 Negative pole -   92 Positive pole -   93 Second group of trenches for decoupling the membrane from the die     body -   94 Webs interrupting the group of second trenches 93 -   95 Third group of trenches for further decoupling the membrane from     the die body -   96 Webs interrupting the third group of second trenches 95 -   97 Boss with grid structure (support structure) -   98 Bore in the cavity for differential pressure sensors -   99 Mechanical guard ring for prevention of dissipation of the     mechanical stress introduced by the bond system -   100 Left-hand structure sensitive to mechanical stress, e.g. a     Wheatstone bridge according to FIG. 12 -   101 One-transistor element -   102 Negative terminal -   103 Positive terminal -   104 Upper transistor left-hand side (p-channel) -   105 Upper transistor right-hand side (p-channel) -   106 Lower transistor left-hand side (p-channel) -   107 Lower transistor right-hand side (p-channel) -   108 Upper reference transistor (p-channel) -   109 Lower reference transistor (p-channel) -   110 Internal reference voltage -   111 First output -   112 Second output -   113 Parasitic first transistor -   114 Parasitic second transistor -   115 Entire transistor field plate -   116 Lever length (here, the example of the cavity wall 3 to the     trench wall) -   117 Example: trench wall -   118 Height of upper structure (here, by way of example, depth of     trench 6) -   119 Receptor point of the upper structure (here, by way of example,     depth of trench 6) -   120 Height of lower structure (here, by way of example, depth of     cavity 4) -   121 Receptor point of the lower structure (here, by way of example,     cavity 4) 

1. A micro-electromechanical semiconductor component comprising: a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor being sensitive to mechanical stresses, wherein the transistor is designed as an integrated component in the bending element and is arranged in an implanted active region pan which is made of a semiconductor material of a first conducting type and is introduced in the bending element, wherein two mutually spaced, implanted drain and source regions made of a semiconductor material of a second conducting type are formed in the active region pan, a channel region extending between the two regions, wherein implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions, wherein an upper face of the active region pan is covered by a gate oxide, and wherein a gate electrode made of polysilicon is located on the gate oxide in the area of the channel region, a feed line likewise made of polysilicon leading to the gate electrode.
 2. The micro-electromechanical semiconductor component according to claim 1, wherein the first conductive type is an n-conductive type and the second conductive type is a p-conductive type. 